The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jul. 08, 2010
Tim Coffy, Houston, TX (US);
Kenneth Blackmon, Houston, TX (US);
Joseph Thorman, Houston, TX (US);
David Rauscher, Angleton, TX (US);
Jun Tian, League City, TX (US);
William Gauthier, Houston, TX (US);
Nathan Williams, Webster, TX (US);
Tim Coffy, Houston, TX (US);
Kenneth Blackmon, Houston, TX (US);
Joseph Thorman, Houston, TX (US);
David Rauscher, Angleton, TX (US);
Jun Tian, League City, TX (US);
William Gauthier, Houston, TX (US);
Nathan Williams, Webster, TX (US);
Fina Technology, Inc., Houston, TX (US);
Abstract
Propylene polymerization processes, polymers and films formed therefrom are described herein. The propylene polymerization processes generally include contacting propylene and an amount of ethylene with a first metallocene catalyst and a second metallocene catalyst within a polymerization reaction vessel to form a propylene based polymer, wherein the amount is an amount effective to form the propylene based polymer including from about 2 wt. % to about 6 wt. % ethylene, the second metallocene catalyst is capable of incorporating a greater amount of ethylene into the propylene based polymer than the first metallocene catalyst and wherein the first metallocene catalyst is capable of forming a propylene/ethylene random copolymer exhibiting a melting temperature that is greater than that of a propylene/ethylene random copolymer formed from the second metallocene catalyst.