The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Jul. 30, 2010
Applicant:

Kyoung Chul Jang, Seongnam, KR;

Inventor:

Kyoung Chul Jang, Seongnam, KR;

Assignee:

Hynix Semiconductor Inc, Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to the present invention, a method of manufacturing a semiconductor device includes forming a recess on a semiconductor substrate, forming a first gate electrode material and a hard mask layer on an entire surface including the recess, etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess, forming a second gate electrode material on an entire surface including the recess, and etching the second gate electrode material and separating the second gate electrode material.


Find Patent Forward Citations

Jang, Kyoung. (2012). Semiconductor device having a buried gate and method for manufacturing the same (U.S. Patent No. 8278201). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8278201

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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