The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Aug. 20, 2010
Applicants:

Yuuki Doi, Miyazaki, JP;

Hirokazu Fujimaki, Miyazaki, JP;

Inventors:

Yuuki Doi, Miyazaki, JP;

Hirokazu Fujimaki, Miyazaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of producing a Schottky diode includes the steps of: forming a resist layer on the semiconductor substrate; performing a first exposure process on the resist layer; performing a first developing process for developing the resist layer to form a first Schottky diode having an excess region; performing a first cleaning process; performing a second exposure process on the first Schottky diode; performing a second developing process on the first Schottky diode to remove the excess region from the first Schottky diode so that a second Schottky diode corresponding to the specific Schottky diode is formed; and performing a second cleaning process.


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