The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Oct. 29, 2010
Yong Suk Yang, Daejeon, KR;
In-kyu You, Daejeon, KR;
Jae Bon Koo, Daejeon, KR;
Soon Won Jung, Daejeon, KR;
Kang Dae Kim, Daejeon, KR;
Yong-young Noh, Deajeon, KR;
Yong Suk Yang, Daejeon, KR;
In-Kyu You, Daejeon, KR;
Jae Bon Koo, Daejeon, KR;
Soon Won Jung, Daejeon, KR;
Kang Dae Kim, Daejeon, KR;
Yong-Young Noh, Deajeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.