The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 02, 2012

Filed:

Mar. 29, 2010
Applicants:

Isamu Tanaka, Higashiomi, JP;

Seiichiro Inai, Higashiomi, JP;

Yoshihide Okawa, Higashiomi, JP;

Daisuke Nishimura, Higashiomi, JP;

Sentaro Yamamoto, Kirishima, JP;

Inventors:

Isamu Tanaka, Higashiomi, JP;

Seiichiro Inai, Higashiomi, JP;

Yoshihide Okawa, Higashiomi, JP;

Daisuke Nishimura, Higashiomi, JP;

Sentaro Yamamoto, Kirishima, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.


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