The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Nov. 19, 2009
Applicants:
Takayoshi Takano, Kawanishi, JP;
Kenji Tsubaki, Katano, JP;
Hideki Hirayama, Asaka, JP;
Sachie Fujikawa, Osaka, JP;
Inventors:
Takayoshi Takano, Kawanishi, JP;
Kenji Tsubaki, Katano, JP;
Hideki Hirayama, Asaka, JP;
Sachie Fujikawa, Osaka, JP;
Assignees:
Panasonic Corporation, Osaka, JP;
Riken, Saitarra, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a process of fabricating a nitride nitride semi-conductor layer of AlGaInN(0<a<1, 0<b<1, 1−a−b>0), the AlGaInN layer is grown at a growth rate less than 0.09 μm/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.