The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Feb. 02, 2009
Hisashi Masui, Santa Barbara, CA (US);
Hisashi Yamada, Ibaraki, JP;
Kenji Iso, Fujisawa, JP;
Asako Hirai, Santa Barbara, CA (US);
Makoto Saito, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Hisashi Masui, Santa Barbara, CA (US);
Hisashi Yamada, Ibaraki, JP;
Kenji Iso, Fujisawa, JP;
Asako Hirai, Santa Barbara, CA (US);
Makoto Saito, Santa Barbara, CA (US);
James S. Speck, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An off-axis cut of a nonpolar III-nitride wafer towards a polar (−c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5° angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0° and 27°.