The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Sep. 22, 2010
Applicants:
Sungjee Kim, Pasadena, CA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Inventors:
Sungjee Kim, Pasadena, CA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.
Quick Actions:
Kim, Sungjee. (2012). Semiconductor nanocrystal heterostructures (U.S. Patent No. 8277942). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8277942
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile