The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jul. 29, 2010
Wei-sheng Su, Taipei, TW;
Chia-hung Kuo, Tainan, TW;
Ya-wen Chou, Tainan, TW;
Jie-ren Ku, Kaohsiung, TW;
Ming-shan Jeng, Taipei County, TW;
Chii-shyang Hwang, Tainan, TW;
Zong-hao Wu, Hsinchu County, TW;
Wei-Sheng Su, Taipei, TW;
Chia-Hung Kuo, Tainan, TW;
Ya-Wen Chou, Tainan, TW;
Jie-Ren Ku, Kaohsiung, TW;
Ming-Shan Jeng, Taipei County, TW;
Chii-Shyang Hwang, Tainan, TW;
Zong-Hao Wu, Hsinchu County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for producing a thermoelectric material is provided. A semiconductor material powder is provided. An electroless plating process is preformed to deposit metal nano-particles on the surface of semiconductor material powder. An electrical current activated sintering process is performed to form a thermoelectric material having one and plurality grain boundaries.