The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Apr. 17, 2009
Applicant:
Vladimir V. Makarov, Fremont, CA (US);
Inventor:
Vladimir V. Makarov, Fremont, CA (US);
Assignee:
Tiza Lab, LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); G21G 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Silicon, silicon dielectrics and low-k dielectrics are etched in a focused ion beam process using gaseous fluorinating etchants selected from the group of triethylamine trihydrofluoride (TEATHF) and xenon fluoride. Xenon fluoride is combined with a secondary protecting agent to avoid undesired corrosion of bare silicon. The protecting agent may be an oxidizing agent such as oxygen, perfluorotripentylamine (PFTPA), or a heavy completely fluorinated hydrocarbon.