The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Dec. 12, 2008
Hun Jae Chung, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Sung Hwan Jang, Gyunggi-do, KR;
Rak Jun Choi, Gyunggi-do, KR;
Soo Min Lee, Seoul, KR;
Hun Jae Chung, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Sung Hwan Jang, Gyunggi-do, KR;
Rak Jun Choi, Gyunggi-do, KR;
Soo Min Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InGaN layers (0<x<1) and at least one AlGaN layer (0≦y<1), and the AlGaN layer is stacked between the InGaN layers.