The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2012

Filed:

Oct. 15, 2010
Applicant:

Hyung Kyu Kim, Seoul, KR;

Inventor:

Hyung Kyu Kim, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method of a semiconductor device wherein a metal pad is etched to form a trench in which a central part is concave in form, or to form a trench in the shape of a cylinder or a parallelepiped on the edge part of a metal pad. Accordingly, the contact area between a polymide isoindro quirazorindione (PIQ) or similar curable layer and the metal pad is increased and the bondability is improved. Accordingly, the technology of improving the characteristic of device by preventing the problem that the metal pad is excessively opened in a subsequent curing process and the layer of a lower portion of the metal pad is attacked is disclosed.


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