The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Mar. 05, 2010
Applicant:
Katsunori Yahashi, Kanagawa-ken, JP;
Inventor:
Katsunori Yahashi, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method includes: alternately stacking a plurality of insulating layers and electrode layers; forming a hole penetrating through a multilayer body of the insulating layers and the electrode layers; forming a conductive film on an inner wall of the hole; anisotropically etching the conductive film to selectively leave the conductive film on a sidewall of the hole; altering the conductive film into an insulator by heat treatment; and removing the insulator covering the electrode layers to expose the electrode layers into the hole.