The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Feb. 14, 2012
David L. Larkin, Richardson, TX (US);
Lily X. Springer, Dallas, TX (US);
Makoto Takemura, Dallas, TX (US);
Ashish V. Gokhale, Allen, TX (US);
Dhaval A. Saraiya, Allen, TX (US);
David L. Larkin, Richardson, TX (US);
Lily X. Springer, Dallas, TX (US);
Makoto Takemura, Dallas, TX (US);
Ashish V. Gokhale, Allen, TX (US);
Dhaval A. Saraiya, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate () located over or in a semiconductor substrate (), and an insulator () located over the first capacitor plate (), at least a portion of the insulator () comprising an interlevel dielectric layer (, or). The integrated high voltage capacitor further includes capacitance uniformity structures () located at least partially within the insulator () and a second capacitor plate () located over the insulator ().