The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Feb. 08, 2008
Georg Röhrer, Graz, AT;
Georg Röhrer, Graz, AT;
austriamicrosystems AG, Unterpremstätten, AT;
Abstract
A MOSFET comprising a substrate of a semiconductor material; source/drain regions, which are arranged at a distance from each other at a surface of the substrate; a gate electrode arranged above an area of the surface of the substrate between the source/drain regions, the gate electrode being electrically insulated from the semiconductor material; at least one recess in the gate electrode, a through-contact arranged in the recess of the gate electrode, the through-contact being electrically insulated from the gate electrode; a terminal contact on the semiconductor material; and a terminal conductor arranged on the side of the gate electrode that faces away from the substrate, wherein the through-contact electrically connects the terminal contact to the terminal conductor.