The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2012

Filed:

May. 17, 2010
Applicants:

Henning Nagel, Untergruppenbach, DE;

Wilfried Schmidt, Schwaigern, DE;

Ingo Schwirtlich, Miltenberg, DE;

Dieter Franke, BL Vaals, NL;

Inventors:

Henning Nagel, Untergruppenbach, DE;

Wilfried Schmidt, Schwaigern, DE;

Ingo Schwirtlich, Miltenberg, DE;

Dieter Franke, BL Vaals, NL;

Assignee:

Schott Solar AG, Mainz, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature Tand keeping the semiconductor element at temperature Tover a time t; sintering the dried material by heating the semiconductor component to a temperature Tand keeping the semiconductor component at temperature Tover a time t; cooling the semiconductor component to a temperature Tthat is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature Tover a time T; cooling the semiconductor component to a temperature Twith T≦−35° C. and keeping the semiconductor component at temperature Tover a time T; and heating the semiconductor component to room temperature.


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