The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Aug. 14, 2009
Applicant:
Toshiya Takahashi, Odawara, JP;
Inventor:
Toshiya Takahashi, Odawara, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure.
Quick Actions:
Takahashi, Toshiya. (2012). Method of forming gas barrier layers including a change in pressure, a gas barrier layer formed by the method, and a gas barrier film (U.S. Patent No. 8273419). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8273419
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