The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2012
Filed:
Oct. 14, 2008
Jong Su Kim, Cheonan-si, KR;
Hyung Sang Park, Seoul-si, KR;
Jong Su Kim, Cheonan-si, KR;
Hyung Sang Park, Seoul-si, KR;
ASM Genitech Korea Ltd., , KR;
Abstract
Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.