The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8273259 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 25, 2012

Filed:

Jan. 17, 2009
Applicants:

Huatan Qiu, Sunnyvale, CA (US);

David Wingto Cheung, Foster City, CA (US);

Inventors:

Huatan Qiu, Sunnyvale, CA (US);

David Wingto Cheung, Foster City, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

Ashing of organic material is conducted initially at a low temperature and then at a high temperature. A low flow rate of ashing gas maximizes ashing rate at the low temperature, and a high flow rate of ashing gas maximizes ashing rate at a high temperature. Preferably, a crossover temperature of a particular organic material in a given ashing system is determined, the crossover temperature characterized in that below the crossover temperature, a decrease in ashing gas flow rate results in an increase of ashing rate, and above the crossover temperature, an increase in ashing gas flow rate results in an increase of ashing rate.


Find Patent Forward Citations

Qiu, Huatan. (2012). Ashing method (U.S. Patent No. 8273259). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8273259

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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