The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8272348 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 25, 2012

Filed:

Feb. 26, 2008
Applicant:

Masayasu Suzuki, Kyoto, JP;

Inventor:

Masayasu Suzuki, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a film-forming process with a capacitively-coupled plasma (CCP) chemical vapor deposition (CVD) device, pulse control is performed on a low-frequency radio-frequency power source. During the pulse control, an ON time and an OFF time form one period. Furthermore, in the pulse control, a time interval between a time period from the moment that the electric power supply is stopped till the electron density decreases to a residual plasma threshold capable of causing an arc discharge and a time period from the moment that the electric power supply is stopped till the density of high-temperature electrons decreases to a specific plasma state serves as the OFF time; a saturation time during the rising process of the density of the high-temperature electrons in the plasma after the electric power supply is started serves as an upper limit of the ON time; and electric power is intermittently supplied under the above conditions.


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Suzuki, Masayasu. (2012). Method for plasma deposition and plasma cvd system (U.S. Patent No. 8272348). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8272348

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