The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Aug. 13, 2009
Ebrahim Khalily, Los Altos, CA (US);
Aaron J. Barker, Broomfield, CO (US);
Alexandru N. Ardelea, Austin, TX (US);
Ebrahim Khalily, Los Altos, CA (US);
Aaron J. Barker, Broomfield, CO (US);
Alexandru N. Ardelea, Austin, TX (US);
Oracle America, Inc., Redwood City, CA (US);
Abstract
A method of optimizing MOSFET device production which includes defining key independent parameters, formulating those key independent parameters into a canonical variational form, calculating theoretical extracted parameters using at least one of key independent parameters in canonical variational form, physics-based analytical models, or corner models. The method also includes calculating simulated characteristics of a device using the key independent parameters and extracting target data parameters based on at least one of measured data and predicted data, comparing the simulated characteristics to the target data parameters, and modifying the theoretical extracted parameters or key independent parameters in canonical form as a result of the comparison. Then, calculating and outputting the simulated characteristics based on the modified theoretical extracted parameters and the modified key independent parameters in canonical form.
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