The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8271255 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 18, 2012

Filed:

May. 31, 2009
Applicants:

Tae Ii Bae, Daejeon, KR;

Young Hwan Kim, Pohang Si, KR;

Jinwook Kim, Seongnam Si, KR;

Inventors:

Tae II Bae, Daejeon, KR;

Young Hwan Kim, Pohang Si, KR;

Jinwook Kim, Seongnam Si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06F 9/455 (2006.01); G06G 7/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a method of exactly calculating the delay of a gate in a digital integrated circuit (IC) that drives a capacitive load and a noise current source based on a crosstalk effect due to capacitive coupling between adjacent conductive lines, the method calculates the delay of the gate by using an output waveform that sums an output waveform of a linear time-varying output resistance model generated by using a gate output resistance library generated by using input and output voltage values of the digital IC and an output waveform of a modified Thevenin equivalent model of the gate.


Find Patent Forward Citations

Bae, Tae. (2012). Method of calculating gate delay based on crosstalk effect due to capacitive coupling (U.S. Patent No. 8271255). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8271255

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