The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jan. 07, 2010
Naoki Tsukiji, Chiba, JP;
Norihiro Iwai, Tokyo, JP;
Keishi Takaki, Tokyo, JP;
Koji Hiraiwa, Tokyo, JP;
Naoki Tsukiji, Chiba, JP;
Norihiro Iwai, Tokyo, JP;
Keishi Takaki, Tokyo, JP;
Koji Hiraiwa, Tokyo, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.