The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Dec. 16, 2008
Koji Oda, Tokyo, JP;
Naoki Nakagawa, Tokyo, JP;
Takeshi Ono, Tokyo, JP;
Yusuke Uchida, Kumamoto, JP;
Koji Oda, Tokyo, JP;
Naoki Nakagawa, Tokyo, JP;
Takeshi Ono, Tokyo, JP;
Yusuke Uchida, Kumamoto, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH, N, and SiH, and Hgas or a mixture of Hand He. The first region is deposited by setting the flow-rate ratio NH/SiHin a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH/SiHto be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.