The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
May. 10, 2011
Yunseo Park, Norcross, GA (US);
Chang-ho Lee, Marietta, GA (US);
Yunseo Park, Norcross, GA (US);
Chang-Ho Lee, Marietta, GA (US);
Samsung Electro-Mechanics, Gyunngi-Do, KR;
Abstract
Embodiments of the invention may provide CMOS power amplifiers with power mode control to provide the desired power-added efficiency (PAE), idle current, output power, and Adjacent Channel Leakage Ratio (ACLR). For instance, there may be a multi-mode WCDMA CMOS RF power amplifier having high/medium/low output power modes aimed to achieve high PAE and low idle current in a portable wireless environment. According to an example embodiment, a CMOS RF power amplifier may provide a plurality of separate signal paths for purposes of supporting multi-power modes. For example, there may be a first signal path which supports a high-power mode, and a second path which is subsequently divided into two recursive signal paths or sub-paths to support respective medium and low-power modes. One of the three power modes may be selected or controlled using bias control switches in the first and second paths.