The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jun. 06, 2008
Kazumasa Tanida, Kawasaki, JP;
Masahiro Sekiguchi, Yokohama, JP;
Kenji Takahashi, Tsukuba, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor devicehas a through holeformed in a second substrate. On the front surface of the semiconductor substrate, a first insulating layeris coated having an openingof the same diameter as that of the through hole, and a first wiring layeris formed on the first insulating layer. Further, near the first wiring layer, the through holeand a through connection portion constituted of a third insulating layerformed on the inner surface and the like and a third wiring layerfilled and formed in the through holeare formed. In addition, a second wiring layerinternally contacting the through connection portion is electrically connected with the first wiring layer. Between the inner surface of the through holeand the first wiring layer, a second insulating layerintervenes so that the first wiring layeris separated from the third wiring layerfilled and formed in the through hole