The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Dec. 13, 2007
Jacob C. Hooker, Hamburg, DE;
Jacob C. Hooker, Hamburg, DE;
NXP B.V., Eindhoven, NL;
Abstract
A method is provided of manufacturing a semiconductor device comprising a first, n-type field effect transistor () and a second, p-type field effect transistor (). The method comprises depositing a gate dielectric layer over a substrate; depositing a gate metal layer () over the gate dielectric layer, depositing a solid metal oxide layer () over the gate dielectric layer; removing a portion of the solid metal oxide layer () over an area of the substrate corresponding to the n-type transistor; and completing gate stacks for the n-type and p-type transistors and forming source and drain regions. The invention thus provides a device which is compatible with IC technology and easy to manufacture. The deposition of a solid metal oxide layer provides a simplified manufacturing process, by avoiding the complexity of gas exposure to form an oxide layer.