The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Feb. 02, 2011
Applicants:
Koji Nil, Kanagawa, JP;
Motoshige Igarashi, Kanagawa, JP;
Inventors:
Koji Nil, Kanagawa, JP;
Motoshige Igarashi, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
There are provided a method of manufacturing a semiconductor device which achieves a reduction in implantation masks, and such a semiconductor device. By implanting boron into NMOS regions using a resist mask and another resist mask as the implantation masks, p-type impurity regions serving as the halo regions of access transistors and drive transistors are formed. By further implanting phosphorus or arsenic into a PMOS region using another resist mask as the implantation mask, n-type impurity regions serving as the halo regions of load transistors are formed.