The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Dec. 15, 2010
Andrew Wood, St. Jakob im Rosental, AT;
Rudolf Zelsacher, Klagenfurt, AT;
Markus Zundel, Egmatting, DE;
Andrew Wood, St. Jakob im Rosental, AT;
Rudolf Zelsacher, Klagenfurt, AT;
Markus Zundel, Egmatting, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor component includes at least one field effect transistor disposed along a trench in a semiconductor region and has at least one locally delimited dopant region in the semiconductor region. The at least one locally delimited dopant region extends from or over a pn junction between the source region and the body region of the transistor or between the drain region and the body region of the transistor into the body region as far as the gate electrode, such that a gap between the pn junction and the gate electrode in the body region is bridged by the locally delimited dopant region.