The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2012

Filed:

Nov. 05, 2009
Applicants:

Kohei Miyagawa, Osaka, JP;

Yasushi Kobayashi, Osaka, JP;

Daigo Yamashina, Osaka, JP;

Inventors:

Kohei Miyagawa, Osaka, JP;

Yasushi Kobayashi, Osaka, JP;

Daigo Yamashina, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor substrate of a first conductivity type, first to third drain offset regions of a second conductivity type are formed in that order in a bottom up manner. A body region of the first conductivity type is formed partly in the second drain offset region and partly in the third drain offset region. The second drain offset region has a lower impurity concentration than the first and third drain offset regions. A curvature portion of the body region is located in the second drain offset region.


Find Patent Forward Citations

Miyagawa, Kohei. (2012). Semiconductor device and method for fabricating the same (U.S. Patent No. 8269274). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8269274

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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