The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jul. 14, 2008
Thomas J. Krutsick, Fleetwood, PA (US);
Thomas J. Krutsick, Fleetwood, PA (US);
Microsemi Semiconductor (U.S.) Inc., Austin, TX (US);
Abstract
The present invention provides embodiments of a capacitor and a method of forming the capacitor. The capacitor includes one or more trenches formed in a semiconductor layer above a substrate. The trench includes dielectric material deposited on the trench walls and a conductive fill material formed within the trench and above the dielectric material. The capacitor also includes one or more first doped regions formed adjacent the trench(es) in the semiconductor layer. The first doped region is doped with a first type of dopant. The capacitor further includes one or more second doped regions formed adjacent the first doped region(s) in the semiconductor layer. The second doped regions are doped with a second type of dopant that is opposite to the first type of dopant.