The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
May. 12, 2008
Applicants:
Jian LI, Palo Alto, CA (US);
King Owyang, Atherton, CA (US);
Inventors:
Jian Li, Palo Alto, CA (US);
King Owyang, Atherton, CA (US);
Assignee:
Vishay-Siliconix, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
Abstract
An ultra-short channel hybrid power field effect transistor (FET) device lets current flow from bulk silicon without npn parasitic. This device does not have body but still have body diode with low forward voltage at high current rating. The device includes a JFET component, a first accumulation MOSFET disposed adjacent to the JFET component, and a second accumulation MOSFET disposed adjacent to the JFET component at the bottom of the trench end, or a MOSFET with an isolated gate connecting the source.