The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Dec. 01, 2009
Dong Yul Lee, Gyunggi-do, KR;
Seong Ju Park, Gwangju, KR;
Min Ki Kwon, Jeollabuk-do, KR;
Chu Young Cho, Gwangju, KR;
Chang Hee Cho, Gwangju, KR;
Yong Chun Kim, Gyunggi-do, KR;
Seung Beom Seo, Gyunggi-do, KR;
Myung Goo Cheong, Gyunggi-do, KR;
Dong Joon Kim, Gyunggi-do, KR;
Dong Yul Lee, Gyunggi-do, KR;
Seong Ju Park, Gwangju, KR;
Min Ki Kwon, Jeollabuk-do, KR;
Chu Young Cho, Gwangju, KR;
Chang Hee Cho, Gwangju, KR;
Yong Chun Kim, Gyunggi-do, KR;
Seung Beom Seo, Gyunggi-do, KR;
Myung Goo Cheong, Gyunggi-do, KR;
Dong Joon Kim, Gyunggi-do, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.