The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Sep. 22, 2009
David B. Slater, Jr., Durham, NC (US);
Bradley E. Williams, Cary, NC (US);
Peter S. Andrews, Durham, NC (US);
John A. Edmond, Cary, NC (US);
Scott T. Allen, Apex, NC (US);
David B. Slater, Jr., Durham, NC (US);
Bradley E. Williams, Cary, NC (US);
Peter S. Andrews, Durham, NC (US);
John A. Edmond, Cary, NC (US);
Scott T. Allen, Apex, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.