The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jan. 11, 2008
Hyun Jun Kim, Gyunggi-do, KR;
Chang Hwan Choi, Gyunggi-do, KR;
Won Ha Moon, Gyunggi-do, KR;
Jong Ho Lee, Seoul, KR;
Jae Chul Yong, Gyunggi-do, KR;
Jin Ha Kim, Gyunggi-do, KR;
Hyun Jun Kim, Gyunggi-do, KR;
Chang Hwan Choi, Gyunggi-do, KR;
Won Ha Moon, Gyunggi-do, KR;
Jong Ho Lee, Seoul, KR;
Jae Chul Yong, Gyunggi-do, KR;
Jin Ha Kim, Gyunggi-do, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.