The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8269233 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 18, 2012

Filed:

Oct. 27, 2009
Applicants:

Wei-yo Chen, Hsinchu, TW;

Yen-wen Chen, Hsinchu, TW;

Shu-ting Hsu, Hsinchu, TW;

Tsung Xian Lee, Hsinchu, TW;

Inventors:

Wei-Yo Chen, Hsinchu, TW;

Yen-Wen Chen, Hsinchu, TW;

Shu-Ting Hsu, Hsinchu, TW;

Tsung Xian Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/201 (2006.01); H01L 33/00 (2010.01); H01L 29/18 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.


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