The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
May. 24, 2011
Paul Shen, Potomac, MD (US);
Michael Wraback, Germantown, MD (US);
Anand V Sampath, Montgomery Village, MD (US);
Paul Shen, Potomac, MD (US);
Michael Wraback, Germantown, MD (US);
Anand V Sampath, Montgomery Village, MD (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer formed of a first semiconductor material crystal lattice which terminates at an interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer substantially transparent to light in the predetermined wavelength range and having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge so as to increase the collection of photogenerated carriers by the photodetector. ; and a methodproviding the above.