The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Sep. 04, 2009
Min Ki Ryu, Seoul, KR;
Chi Sun Hwang, Daejeon, KR;
Chun Won Byun, Daejeon, KR;
Hye Yong Chu, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Min Ki Ryu, Seoul, KR;
Chi Sun Hwang, Daejeon, KR;
Chun Won Byun, Daejeon, KR;
Hye Yong Chu, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.