The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Dec. 06, 2011
Chaehwan Jeong, Gwangju, KR;
Jong Ho Lee, Gwangju, KR;
Ho-sung Kim, Gwangju, KR;
Seongjae Boo, Gwangju, KR;
Chaehwan Jeong, Gwangju, KR;
Jong Ho Lee, Gwangju, KR;
Ho-Sung Kim, Gwangju, KR;
Seongjae Boo, Gwangju, KR;
Abstract
In one example, a method for fabricating a solar cell comprising a first electrode, a first-type layer, an intrinsic layer, a second-type layer and a second electrode is disclosed. The method comprising forming a second-type layer including an amorphous silicon (Si) carbide thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H) gas, silane (SiH) gas, diborane (BH) and ethylene (CH) gas, wherein the ethylene (CH) gas includes 60% hydrogen gas diluted ethylene gas, the diborane gas is 97% hydrogen gas diluted diborane gas, the mixed gas includes 1 to 1.2% ethylene gas and 6 to 6.5% diborane gas.