The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2012

Filed:

Apr. 09, 2010
Applicants:

Cuong V. Pham, San Diego, CA (US);

David E. Chubin, Northridge, CA (US);

Aaron D. Kuan, Huntington Beach, CA (US);

Colleen L. Khalifa, Perris, CA (US);

Inventors:

Cuong V. Pham, San Diego, CA (US);

David E. Chubin, Northridge, CA (US);

Aaron D. Kuan, Huntington Beach, CA (US);

Colleen L. Khalifa, Perris, CA (US);

Assignee:

Teledyne Technologies Incorporated, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating an electronic circuit including forming a first depression on a first surface of a first wafer and forming a second depression on the first surface of the first wafer. The second depression is adjacent the first depression and separated from the first depression by a wall. The method further includes locating an actuator on the wall and attaching a first surface of a second wafer to the first surface of the first wafer to cover the first and second depressions. A first portion of the second wafer and the first depression define a first reservoir to contain a first chemical, and a second portion of the second wafer and the second depression define a second reservoir to contain a second chemical.


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