The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 18, 2012

Filed:

Dec. 22, 2009
Applicants:

Tamao Okuya, Tokyo, JP;

Hiroshi Aruga, Tokyo, JP;

Yoshiaki Higuchi, Tokyo, JP;

Inventors:

Tamao Okuya, Tokyo, JP;

Hiroshi Aruga, Tokyo, JP;

Yoshiaki Higuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 45/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process of sealing a semiconductor substrate by contacting the semiconductor substrate with a surface of a release layer (I) of a gas barrier release film that is in the form of a mold, which includes vacuum suction; injecting a sealing resin between the semiconductor substrate and the mold; and releasing said mold from said semiconductor substrate having said sealing resin present thereon, where the gas barrier release film has a release layer (I), which has excellent releasability; a plastic support layer (II) supporting the release layer; and a metal or a metal oxide gas restraint layer (III), present between the release layer and the support layer, where the gas barrier release film exhibits a xylene gas permeability of at most 5×10(kmol m/(s·m·kPa)) at 170° C., and a surface of said release layer (I) has an arithmetic surface roughness of from 0.15 to 3.5 μm, exhibiting a satin-finish.


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