The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jun. 22, 2007
Koji Omichi, Sakura, JP;
Yoshikazu Kaifuchi, Sakura, JP;
Munehisa Fujimaki, Sakura, JP;
Akihiko Yoshikawa, Chiba, JP;
Koji Omichi, Sakura, JP;
Yoshikazu Kaifuchi, Sakura, JP;
Munehisa Fujimaki, Sakura, JP;
Akihiko Yoshikawa, Chiba, JP;
Fujikura Ltd., Tokyo, JP;
Chiba University, Chiba, JP;
Abstract
A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.