The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Apr. 14, 2009
Chia-ying Lee, Xinzhuang, TW;
Seu-yi LI, Zhubei, TW;
Pang Lin, Hsinchu, TW;
Tseung-yuan Tseng, Hsinchu, TW;
Chia-Ying Lee, Xinzhuang, TW;
Seu-Yi Li, Zhubei, TW;
Pang Lin, Hsinchu, TW;
Tseung-Yuan Tseng, Hsinchu, TW;
National Chiao-Tung University, Hsinchu, TW;
Abstract
This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.