The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Nov. 12, 2007
James Mac Freitag, San Jose, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Mustafa Michael Pinarbasi, Morgan Hill, CA (US);
James Mac Freitag, San Jose, CA (US);
Wipul Pemsiri Jayasekara, Los Gatos, CA (US);
Mustafa Michael Pinarbasi, Morgan Hill, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The method includes providing a substrate, and depositing a plurality of sensor layers. A layer of material that is resistant to removal by chemical mechanical polishing (CMP stop layer) and an antireflective coating layer are deposited. A photoresist mask is formed on the antireflective layer, and a reactive ion etch (RIE) is performed to remove portions of the ion mill resistant mask that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W. An ion milling is performed to remove a portion of the sensor layers, the ion milling being terminating before all of the sensor materials have been removed.