The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8265113 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 11, 2012

Filed:

Jul. 15, 2010
Applicants:

Yusuke Yoshizumi, Itami, JP;

Shimpei Takagi, Osaka, JP;

Takatoshi Ikegami, Itami, JP;

Masaki Ueno, Itami, JP;

Koji Katayama, Osaka, JP;

Inventors:

Yusuke Yoshizumi, Itami, JP;

Shimpei Takagi, Osaka, JP;

Takatoshi Ikegami, Itami, JP;

Masaki Ueno, Itami, JP;

Koji Katayama, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure.


Find Patent Forward Citations

Yoshizumi, Yusuke. (2012). Group-iii nitride semiconductor laser device, and method of fabricating group-iii nitride semiconductor laser device (U.S. Patent No. 8265113). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8265113

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