The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 2012

Filed:

Sep. 16, 2007
Applicants:

Ilan Bloom, Haifa, IL;

Eduardo Maayan, Kfar Saba, IL;

Inventors:

Ilan Bloom, Haifa, IL;

Eduardo Maayan, Kfar Saba, IL;

Assignee:

Spansion Israel Ltd, Netanya, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention includes methods, circuits and systems for reading non-volatile memory ('NVM') cells, including multi-level NVM cells. According to some embodiments of the present invention, there may be provided a NVM cell threshold voltage detection circuit adapted to detect an approximate threshold voltage associated with a charge storage region of a NVM cell, where the NVM cell may be a single or a multi-charge storage region cell. A decoder circuit may be adapted to decode and/or indicate the logical state of a NVM cell charge storage region by mapping or converting a detected approximate threshold voltage of the charge storage region into a logical state value.


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