The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Dec. 14, 2009
Kyu Sung Kim, Gyeonggi-do, KR;
Kyu Sung Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A non-volatile semiconductor memory circuit for use in compensating for time dependent resistive changes in phase change memory cells is presented. The non-volatile semiconductor memory circuit includes a control signal generation unit and a sensing block. The control signal generation unit is configured to provide a control signal having a voltage level corresponding to a read command or a write command. The sensing block is configured to selectively provide a first sensing reference voltage substantially equal to a reference voltage. The sensing block is also configured to selectively provide a second sensing reference voltage which is lower than the reference voltage. The first and second sensing reference voltages are selectively provided as a function of the voltage level of the control signal in which the first and second sensing reference voltages are used to read data of the memory cell array.