The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Apr. 22, 2009
Liyang Zhang, West Hills, CA (US);
Pei-ming Daniel Chow, Los Angeles, CA (US);
Mau-chung Frank Chang, Los Angeles, CA (US);
Liyang Zhang, West Hills, CA (US);
Pei-Ming Daniel Chow, Los Angeles, CA (US);
Mau-Chung Frank Chang, Los Angeles, CA (US);
Microchip Technology Incorporated, Chandler, AZ (US);
Abstract
A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process. The second functional block may be a power amplifier formed by a heterojunction bipolar transistor process. In another aspect, the first functional block may be a power amplifier formed by a heterojunction bipolar transistor process. The second functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process.