The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Feb. 12, 2010
Enrico Santi, Columbia, SC (US);
Zhiyang Chen, Columbia, SC (US);
Alexander Grekov, West Columbia, SC (US);
Enrico Santi, Columbia, SC (US);
Zhiyang Chen, Columbia, SC (US);
Alexander Grekov, West Columbia, SC (US);
University of South Carolina, Columbia, SC (US);
Abstract
A MOSFET driver compatible JFET device is disclosed. The JFET device can include a gate contact, a drain contact, and a source contact. The JFET device can further include a first gate region of semiconductor material adjacent the gate contact and a second region of semiconductor material adjacent the first gate region. The first gate region and the second gate region can form a first p-n junction between the first gate region and the second gate region. The JFET device can further include a channel region of semiconductor material adjacent the source contact. The channel region and the second gate region can form a second p-n junction between the second gate region and the channel region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile