The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Oct. 20, 2010
Applicant:
Akito Hara, Kawasaki, JP;
Inventor:
Akito Hara, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a field effect transistor and a strain generating layer to apply a stress to a channel region of the field effect transistor. The strain generating layer contains at least one of oxygen and nitrogen of 1.0×10cmto 5.0×10cm, or alternatively, the strain generating layer contains self-interstitial atoms and/or vacancies of 1.0×10cmto 5.0×10cm. In the latter case, at least a portion of the self-interstitial atoms and/or the vacancies exist as a cluster.
Hara, Akito. (2012). Semiconductor device and manufacturing method thereof (U.S. Patent No. 8264012). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8264012
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile